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NXP Semiconductors
PESD5V0F1BL
Femtofarad bidirectional ESD protection diode
Table 6. ESD maximum ratings
T amb = 25 ? C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Max
Unit
Per device
V ESD
electrostatic discharge voltage
IEC 61000-4-2
[1]
-
10
kV
(contact discharge)
MIL-STD-883
-
10
kV
(human body model)
[1]
Device stressed with ten non-repetitive ESD pulses.
Table 7.
Standard
Per device
ESD standards compliance
Conditions
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3 (human body model)
> 8 kV (contact)
> 4 kV
001aaa631
120
I PP
(%)
80
100 % I PP ; 8 μ s
e ? t
001aaa630
I PP
100 %
90 %
5 0 % I PP ; 20 μ s
40
10 %
0
0
10
20
30
t ( μ s)
40
t r = 0.7 ns to 1 ns
30 ns
60 ns
t
Fig 1.
8/20 ? s pulse waveform according to
IEC 61000-4-5
Fig 2.
ESD pulse waveform according to
IEC 61000-4-2
PESD5V0F1BL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 24 October 2011
? NXP B.V. 2011. All rights reserved.
3 of 12
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